c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . K2611B K2611B K2611B K2611B rev.a nov .201 1 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 11a,900v, r ds(on) (max1.10 ? )@v gs =10v ultra-low gate charge(typical 72nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general description this n-channel enhancement mode power field effect transistors are produced using winsemi's proprietary, planar stripe ,dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies. absolute maximum ratings symbol parameter value units v dss drain source voltage 900 v i d continuous drain current(@tc=25 ) 11 a continuous drain current(@tc=100 ) 7 a i dm drain current pulsed (note1) 45.6 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 1000 mj e ar repetitive avalanche energy (note1) 30 mj dv/dt peak diode recovery dv /dt (note3) 4.0 v/ ns p d total power dissipation(@tc=25 ) 300 w derating factor above 25 2.38 w/ t j junction temperature 150 t stg storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.42 /w r qja thermal resistance , junction-to -ambient - - 40 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611B K2611B K2611B K2611B 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 10 0 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 900 v,v gs =0v - - 10 a v ds = 720 v, tc=125 100 a drain -source breakdown voltage v (br)dss i d = 250 a,v gs =0v 900 - - v gate threshold voltage v gs(th) v ds = v gs ,i d = 250 a 3.0 - 5.0 v drain -source on resistance r ds(on) v gs =10v,i d = 5.5 a - 0.95 1.10 ? forward transconductance gfs v ds = 50 v,i d = 5.5 a - 12 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 2700 3500 pf reverse transfer capacitance c rss - 30 40 output capacitance c oss - 260 340 switching time turn-on rise time tr v dd = 450 v, i d = 11 a r g = 25 ? (note4,5) - 135 280 ns turn-on delay time td( on ) - 65 140 turn-on fall time tf - 90 190 turn-off delay time td( off ) - 165 340 total gate charge(gate-source plus gate-drain) qg v dd = 720 v, v gs =10v, i d = 11 a (note 4 ,5) - 72 94 nc gate-source charge qgs - 16 - gate-drain("miller") charge qgd - 35 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 11 a pulse drain reverse current i drp - - - 45 a forward voltage(diode) v dsf i dr = 11 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 11 a,v gs =0v, di dr / dt =100 a / s - 850 - ns reverse recovery charge qrr - 11.2 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 15m h i as = 11 a,v dd = 50 v,r g = 25 ? ,starting t j =25 3.i sd 11 a,di/dt 2 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611B K2611B K2611B K2611B 3 / 7 fig.1 on state characteristics fig.2 transfer current characteristics fig.3 on-resistance variation vs drain current and gate voltage fig.4 body diode forward voltage variation with source current and temperature fig.5 capacitance characteristics fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611B K2611B K2611B K2611B 4 / 7 fig. 9 maximum safe operation area fig. 10 maximum drain current vs case temperature fig. 11 transient thermal response curve fig.7 breakdown voltage variation vs.temperature fig.8 on-resistance variation vs.temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611B K2611B K2611B K2611B 5 / 7 fig.1 2 gate test circuit & waveform fig.1 3 resistive switching test circuit & waveform fig.1 4 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611B K2611B K2611B K2611B 6 / 7 fig.1 5 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611B K2611B K2611B K2611B 7 / 7 to- to- to- to- 3pb 3pb 3pb 3pb package package package package dimension dimension dimension dimension unit:mm
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